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KSC5029
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KSC5029

SKU: KSC5029
KSC5029 Transistor Silicon NPN CASE: TO3P MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer Samsung
Vbr CBO 1.1k
Vbr CEO 800
Max. PD (W) 90
t(f) Max. (S) 300n
Max. hFE 40
Min hFE 10
Ic Max. (A) 4.5
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 720m
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 1100 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 4.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 1271799
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