KSC5030

SKU: KSC5030

KSC5030 Transistor Silicon NPN CASE: TO3P MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3P
Manufacturer	Samsung
Vbr CBO	1.1k
Vbr CEO	800
Max. PD (W)	100
t(f) Max. (S)	300n
Max. hFE	40
Min hFE	10
Ic Max. (A)	6.0
@Ic (test) (A)	400m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	15M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	1100 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	35 pF
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	1272836

Back