KSC5030N
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KSC5030N

SKU: KSC5030N
KSC5030N Transistor Silicon NPN CASE: TO3P MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 1100 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 1433991
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