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KSC5035
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KSC5035

SKU: KSC5035
KSC5035 Transistor Silicon NPN CASE: TO126 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Samsung
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 8.0
Max. hFE 320
Min hFE 40
Ic Max. (A) 300m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 64m
Trans. Freq (Hz) Min. 500M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1282190
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