KSC5036

SKU: KSC5036

KSC5036 Transistor Silicon NPN CASE: TO126 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Samsung
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	7
Max. hFE	320
Min hFE	40
Ic Max. (A)	150m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Derate Above 25°C	56m
Trans. Freq (Hz) Min.	400M
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	7 W
Maximum Collector-Base Voltage \|Vcb\|	220 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.15 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	800 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	1282147

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