| Type | Transistor Silicon NPN | |
| Case | SOT533 | |
| Manufacturer | Samsung | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 10 W | |
| Maximum Collector-Base Voltage |Vcb| | 500 V | |
| Maximum Collector-Emitter Voltage |Vce| | 400 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 569519 | |