KSC838

SKU: KSC838

KSC838 Transistor - CASE: TO92 MAKE: Samsung

Datasheet

KSC838 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	KSC838Y
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	35
Vbr CEO	30
Max. PD (W)	250m
C(ob) (F)	3.2p
hfe	40
Ic Max. (A)	30m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	12
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3.2 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	355522

Back