KSC839G

SKU: KSC839G

KSC839G Transistor - CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSC839
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	35
Vbr CEO	30
Max. PD (W)	250m
C(ob) (F)	3.5p
hfe	40
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	80M
@VCE (test) (V)	12
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	2 pF
Transition Frequency (ft):	80 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SKU	569532

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