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KSC900G
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KSC900G

SKU: KSC900G
KSC900G Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Product specifications
Equivalent KSC900
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 250m
hfe 120
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 150
@Ic (A) 500u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 569540
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