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KSD1021
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KSD1021

SKU: KSD1021
KSD1021 Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 350m
C(ob) (F) 16p
Derate (Amb) (W/°C) 2.5m
hfe 70
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 16 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 1249838
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