KSD1221Y
View detailed images (8)

KSD1221Y

SKU: KSD1221Y
KSD1221Y Transistor Silicon NPN CASE: TO252 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1434025
Back