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KSD1222
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KSD1222

SKU: KSD1222
KSD1222 Transistor Silicon NPN CASE: SOT533 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT533
Manufacturer Samsung
Vbr CEO 40
Max. PD (W) 15
t(on) Delay (S) 100n-
t(f) Max. (S) 200n-
Min hFE 2k
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 20u
Mat. Silicon Logic
Polarity NPN
t(stor) Max. (S) 1.0u-
Derate Above 25°C 120m
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 3000
SKU 217955
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