The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KSD1616A
View detailed images (12)

KSD1616A

SKU: KSD1616A
KSD1616A Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Datasheet
KSD1616A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 120
Vbr CEO 60
Max. PD (W) 750m
C(ob) (F) 19p
Derate (Amb) (W/°C) 6.0m
hfe 135
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 19 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 135
SKU 217965
Back