KSD1616AG
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KSD1616AG

SKU: KSD1616AG
KSD1616AG Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 19 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 1434035
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