The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KSD1616AL

KSD1616AL

SKU: KSD1616AL
KSD1616AL Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 19 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 1434037
Back