KSD1616L

SKU: KSD1616L

KSD1616L Transistor Silicon NPN CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSD1616
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	750m
C(ob) (F)	19p
Derate (Amb) (W/°C)	6.0m
hfe	135
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	100m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	19 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	300
SKU	570053

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