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KSD2012Y
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KSD2012Y

SKU: KSD2012Y
KSD2012Y Transistor - CASE: SOT186A MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSD2012
Type Transistor Silicon NPN
Case SOT186A
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 570066
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