KSD227

SKU: KSD227

KSD227 Transistor - CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSD227Y
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	400m
hfe	70
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	70
SKU	569318

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