KSD227G

SKU: KSD227G

KSD227G Transistor - CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSD227
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	400m
hfe	70
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	200
SKU	569554

Back