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KSD362
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KSD362

SKU: KSD362
KSD362 Transistor Silicon NPN CASE: SOT78 MAKE: Samsung
Datasheet
KSD362 Datasheet
Product specifications
Equivalent KSD362R
Type Transistor Silicon NPN
Case SOT78
Manufacturer Samsung
Vbr CBO 150
Vbr CEO 70
Max. PD (W) 40
Max. hFE 140
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 355523
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