KSD363

SKU: KSD363

KSD363 Transistor - CASE: SOT78 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSD363Y
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Samsung
Vbr CBO	300
Vbr CEO	120
Max. PD (W)	40
Max. hFE	240
Min hFE	40
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	320m
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	569320

Back