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KSD363O
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KSD363O

SKU: KSD363O
KSD363O Transistor Silicon NPN CASE: SOT78 MAKE: Samsung
Product specifications
Equivalent KSD363
Type Transistor Silicon NPN
Case SOT78
Manufacturer Samsung
Vbr CBO 300
Vbr CEO 120
Max. PD (W) 40
Max. hFE 240
Min hFE 40
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 569567
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