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KSD5004
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KSD5004

SKU: KSD5004
KSD5004 Transistor Silicon NPN CASE: TO247 MAKE: Samsung
Datasheet
KSD5004 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO247
Manufacturer Samsung
Vbr CBO 1.5k
Vbr CEO 800
Max. PD (W) 80
t(f) Max. (S) 400n
Min hFE 8.0
Ic Max. (A) 2.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 640m
Trans. Freq (Hz) Min. 3M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8
SKU 217976
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