KSD5007

SKU: KSD5007

KSD5007 Transistor Silicon NPN CASE: TO247 MAKE: Samsung

Datasheet

KSD5007 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO247
Manufacturer	Samsung
Vbr CBO	1.5k
Vbr CEO	800
Max. PD (W)	120
t(f) Max. (S)	400n
Min hFE	8.0
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	960m
Trans. Freq (Hz) Min.	3M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	8
SKU	217978

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