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KSD5010
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KSD5010

SKU: KSD5010
KSD5010 Transistor - Case: TO218F Make: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO218F
Manufacturer Samsung
Vbr CBO 1.5k
Vbr CEO 800
Max. PD (W) 50
t(f) Max. (S) 400n
Min hFE 8.0
Ic Max. (A) 2.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 3M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8
SKU 569574
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