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KSD5057
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KSD5057

SKU: KSD5057
KSD5057 Transistor Silicon NPN CASE: TO247 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO247
Manufacturer Samsung
Vbr CBO 1.5k
Vbr CEO 800
Max. PD (W) 60
t(f) Max. (S) 300n
Min hFE 8.0
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 480m
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8
SKU 1272840
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