The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
KSD5076

KSD5076

SKU: KSD5076
KSD5076 Transistor - Case: TO218F Make: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO218F
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 569581
Back