| Type | Transistor Silicon NPN | |
| Case | TO218F | |
| Manufacturer | Samsung | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 60 W | |
| Maximum Collector-Base Voltage |Vcb| | 1500 V | |
| Maximum Collector-Emitter Voltage |Vce| | 800 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 3 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 8 | |
| SKU | 569581 | |