KSD569

SKU: KSD569

KSD569 Transistor Silicon NPN CASE: TO220 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Samsung
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	40
Max. hFE	200
Min hFE	40
Ic Max. (A)	7.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	320m
Oper. Temp (°C) Max.	150
@VCE (V)	1.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	217990

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