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KSD880G
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KSD880G

SKU: KSD880G
KSD880G Transistor - CASE: SOT78 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSD880
Type Transistor Silicon NPN
Case SOT78
Manufacturer Samsung
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 30
t(f) Max. (S) 800n-
Max. hFE 300
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 240m
Trans. Freq (Hz) Min. 3M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 569594
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