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KSD882O
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KSD882O

SKU: KSD882O
KSD882O Transistor - CASE: SOT32 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSD882
Type Transistor Silicon NPN
Case SOT32
Manufacturer Samsung
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 10
Max. hFE 400
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 90M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 45 pF
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 569597
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