KSD882Y

SKU: KSD882Y

KSD882Y Transistor - CASE: SOT32 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSD882
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Samsung
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	10
Max. hFE	400
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Derate Above 25°C	80m
Trans. Freq (Hz) Min.	90M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	45 pF
Transition Frequency (ft):	90 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	569599

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