| Weight |
0.01 kg
|
| Equivalent |
KSD985Y |
| Type |
Transistor Silicon NPN |
| Case |
SOT32 |
| Manufacturer |
Samsung |
| Vbr CEO |
60 |
| Max. PD (W) |
10 |
| t(on) Delay (S) |
500n- |
| t(f) Max. (S) |
1.0u- |
| Max. hFE |
30k |
| Min hFE |
2k |
| Ic Max. (A) |
1.5 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
10u |
| Mat. |
Silicon Logic |
| Polarity |
NPN |
| t(stor) Max. (S) |
1.0u- |
| Derate Above 25°C |
80m |
| @VCE (test) |
2.0 |
| Oper. Temp (°C) Max. |
150 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
150 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
8 V |
| Maximum Collector Current |Ic max| |
1.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Forward Current Transfer Ratio (hFE), MIN |
8000 |
| SKU |
569324 |