KSD986

SKU: KSD986

KSD986 Transistor Silicon NPN CASE: TO126 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Samsung
Vbr CEO	80
Max. PD (W)	10
t(on) Delay (S)	500n-
t(f) Max. (S)	1.0u-
Max. hFE	30k
Min hFE	2k
Ic Max. (A)	1.5
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10u
Mat.	Silicon Logic
Polarity	NPN
t(stor) Max. (S)	1.0u-
Derate Above 25°C	80m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	8000
SKU	1277475

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