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KSH112I
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KSH112I

SKU: KSH112I
KSH112I Transistor Silicon NPN CASE: TO252 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 10000
SKU 1434100
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