| Type | Transistor N Channel FET | |
| Case | SOT23 | |
| Manufacturer | Samsung | |
| Vbr GSS | 18- | |
| Max. PD (W) | 200m | |
| Derate (Amb) (W/°C) | 1.6m | |
| gfs Min | 9.0m- | |
| Idss Max. (A) | 1.0m | |
| Igss Max. (A) | 10n | |
| Vp Max. | 4.0 | |
| Oper. Temp (°C) Max. | 150 | |
| Pinout Equivalence Number | 3-21 | |
| Surface Mounted Yes/No | YES | |
| SKU | 218002 | |