| Type | Transistor Silicon NPN | |
| Case | TO92 | |
| Manufacturer | Samsung | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 0.625 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector-Emitter Voltage |Vce| | 25 V | |
| Maximum Emitter-Base Voltage |Veb| | 2.5 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 1 pF | |
| Forward Current Transfer Ratio (hFE), MIN | 300 | |
| SKU | 569620 | |