| Weight |
0.01 kg
|
| Type |
Transistor Silicon Pre-Biased-NPN |
| Case |
TO92 |
| Manufacturer |
Samsung |
| Mat. |
Silicon Logic |
| Polarity |
Pre-Biased-NPN |
| Mat. Struct. |
NPN |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
3.7 pF |
| Transition Frequency (ft): |
250 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| Built in Bias Resistor R1 |
10 kOhm |
| SKU |
569632 |