The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
KSR1101
View detailed images (5)

KSR1101

SKU: KSR1101
KSR1101 SI-NPN-DIGI - Case: SOT23 Make: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Mat. Silicon Logic
Polarity Pre-Biased-NPN
Mat. Struct. NPN
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.7 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code R01
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 569636
Back