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KSR2009
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KSR2009

SKU: KSR2009
KSR2009 Transistor - CASE: TO92 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Samsung
Mat. Silicon Logic
Polarity Pre-Biased-PNP
Mat. Struct. PNP
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 5.5 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
Built in Bias Resistor R1 4.7 kOhm
SKU 569656
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