The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
KSR2012
View detailed images (12)

KSR2012

SKU: KSR2012
KSR2012 Transistor Silicon PNP CASE: TO92 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Samsung
Mat. Silicon Logic
Polarity Pre-Biased-PNP
Mat. Struct. PNP
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 5.5 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
Built in Bias Resistor R1 47 kOhm
SKU 569659
Back