| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Samsung |
| Mat. |
Silicon Logic |
| Polarity |
Pre-Biased-PNP |
| Mat. Struct. |
PNP |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
5.5 pF |
| Transition Frequency (ft): |
200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SMD Transistor Code |
R59 |
| Built in Bias Resistor R1 |
4.7 kOhm |
| SKU |
569670 |