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KST1009F1
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KST1009F1

SKU: KST1009F1
KST1009F1 SemiConductor - CASE: SOT23 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 570132
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