| Type | Transistor Silicon NPN | |
| Case | SOT23 | |
| Manufacturer | Samsung | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 0.35 W | |
| Maximum Collector-Base Voltage |Vcb| | 300 V | |
| Maximum Collector-Emitter Voltage |Vce| | 300 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 3 pF | |
| Transition Frequency (ft): | 50 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SMD Transistor Code | 1D | |
| SKU | 569290 | |