KT209M

SKU: KT209M

KT209M Transistor Silicon PNP CASE: Standard MAKE: USSR

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	Standard
Manufacturer	USSR
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	200m
Derate (Amb) (W/°C)	2.2m
hfe	40
Ic Max. (A)	300m
Polarity	PNP
Trans. Freq (Hz) Min.	5.0M
@VCE (test) (V)	1.0i
Oper. Temp (°C) Max.	125
@Ic (A)	30m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	50 pF
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	1248533

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