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KT313B
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KT313B

SKU: KT313B
KT313B Transistor Silicon PNP CASE: TO18 MAKE: USSR
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer USSR
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 300m
Derate (Amb) (W/°C) 3.0m
hfe 80
Ic Max. (A) 350m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.35 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 1279564
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