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KT501L
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KT501L

SKU: KT501L
KT501L Transistor Silicon PNP CASE: TO18 MAKE: USSR
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer USSR
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 350m
Derate (Amb) (W/°C) 2.8m
hfe 20
Ic Max. (A) 500m
Polarity PNP
Trans. Freq (Hz) Min. 5.0M
@VCE (test) (V) 1.0i
Oper. Temp (°C) Max. 150
@Ic (A) 30m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 1248517
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