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KT602BM
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KT602BM

SKU: KT602BM
KT602BM Transistor Silicon NPN CASE: TO126 MAKE: USSR
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer USSR
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 850m
hfe 50
Ic Max. (A) 75m
Icbo Max. @Vcb Max. (A) 70u
Polarity NPN
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 125
@Ic (A) 2.5m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2.8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.075 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 1251541
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