The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KT626D
View detailed images (13)

KT626D

SKU: KT626D
KT626D Transistor Silicon PNP CASE: TO126 MAKE: USSR
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer USSR
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 6.5
Derate (Amb) (W/°C) 100m
Max. hFE 250
Min hFE 40
Ic Max. (A) 500m
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 150u
Polarity PNP
R(sat) (Û) 2.0
Trans. Freq (Hz) Min. 45M
Oper. Temp (°C) Max. 125
@VCE (V) 2.0i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6.5 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1267317
Back