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KT626G
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KT626G

SKU: KT626G
KT626G Transistor Silicon PNP CASE: TO126 MAKE: USSR
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer USSR
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 6.5
Derate (Amb) (W/°C) 100m
Max. hFE 60
Min hFE 15
Ic Max. (A) 500m
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 150u
Polarity PNP
R(sat) (Û) 2.0
Trans. Freq (Hz) Min. 45M
Oper. Temp (°C) Max. 125
@VCE (V) 2.0i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6.5 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 1267315
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