The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KT807BM

KT807BM

SKU: KT807BM
KT807BM Transistor Silicon NPN CASE: Standard MAKE: USSR
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer USSR
Vbr CEO 100
Max. PD (W) 10
Max. hFE 100
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 0.5
Icbo Max. @Vcb Max. (A) 5m
Polarity NPN
Oper. Temp (°C) Max. 140
@VCE (V) 5.0i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1269905
Back